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| BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 5 6 2 1 3 FEATURES Complimentary Pairs Low On-Resistance Low Gate Threshold Voltage Fast Switching Available in lead-free plating (100% matte tin finish) 6 5 4 APPLICATIONS Switching Power Supplies Hand-Held Computers, PDAs Q1 Q2 MARKING CODE: S82 MAXIMUM RATINGS - TOTAL DEVICE Rating Total Power Dissipation (Note 1) Operating Junction and Storage Temperature Range TJ = 25C Unless otherwise noted Symbol PD TJ, T stg 1 2 3 Value 200 -55 to +150 Units mW C MAXIMUM RATINGS N - CHANNEL - Q1 , 2N7002 Rating Drain-Source Voltage Drain-Gate Voltage RGS < 1.0Mohm Gate-Source Voltage - Continuous Drain Current - Continuous (Note 1) TJ = 25C Unless otherwise noted Symbol VDSS V DGR VGSS ID Value 60 60 20 115 Units V V V mA MAXIMUM RATINGS P - CHANNEL - Q2 , BSS84 Rating Drain-Source Voltage Drain-Gate Voltage RGS < 20Kohm Gate-Source Voltage - Continuous Drain Current - Continuous (Note 1) TJ = 25C Unless otherwise noted Symbol VDSS V DGR VGSS ID Value -50 -50 20 130 Units V V V mA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol R thja Value 625 Units C/W Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 9/15/2005 Page 1 www.panjit.com BSS8402DW Electrical Characteristics - N-CHANNEL - Q1 , 2N7002 OFF CHARACTERISTICS (Note 2) Parameter Symbol Conditions Min 60 TJ=25C TJ=125C Typ 80 Max 1.0 500 10 Units V A nA Drain-Source Breakdown Voltage BVDSS I D = 10A, VGS= 0V Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Parameter Gate Threshold Voltage Symbol Conditions Min 1.0 0.5 0.08 Typ 1.6 1.8 2.0 1.65 Max 2.5 4.5 7.0 Units V Ohms A S V GS(th) VDS= V GS I D= 250A , VGS= 5V, I D= 0.05A VGS= 10V, I D= 0.5A V DS= 10V, I D = 0.2A I DSS I GSS VDS= 60V, V GS= 0 VGS= 20V, V DS= 0V TJ = 25C Unless otherwise noted Static Drain-Source On-ResistanceR DS(ON) On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Turn-Off Delay Time Symbol Symbol C iss Coss Crss I D(ON) VGS= 10V, V DS= 7.5V g FS Conditions VDS= 25V, VGS= 0V, f = 1.0MHz Min - Typ - Max 50 25 5.0 Units pF pF pF Conditions Min - Typ - Max 20 20 Units ns ns t D(ON) V =30V, I =0.2A, R =150ohm L DD D RGEN= 25ohm, VGEN = 10V t D(OFF) Note 2. Short duration test pulse used to minimize self-heating 9/15/2005 Page 2 www.panjit.com BSS8402DW Electrical Characteristics - P-CHANNEL - Q2 , BSS84 OFF CHARACTERISTICS (Note 3) Parameter Symbol Conditions Min -50 Typ Max -15 -60 -0.1 10 nA A Units V Drain-Source Breakdown Voltage BVDSS I D = -250A, VGS = 0V VDS= -50V, VGS= 0V, T J =25C Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Parameter Gate Threshold Voltage Symbol Conditions Min -0.8 0.05 Typ 1.44 3.8 Max -2.0 10 Units V Ohms S V GS(th) VDS= V GS I D= -1mA , I DSS I GSS V DS= -50V, VGS= 0V, T J =125C V DS= -25V, V GS= 0V, T J =25C V GS= 20V, V DS= 0V TJ = 25C Unless otherwise noted Static Drain-Source On-ResistanceR DS(ON) VGS= -5V, I D= -0.1A g FS V DS= -25V, I D= -0.1A Forward Transconductance DYNAMIC CHARACTERISTICS Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Turn-Off Delay Time Symbol t D(ON) t D(OFF) Conditions VDD= -30V, I D = -0.27A, RGEN= 50ohm, VGS= -10V Symbol C iss Coss Crss Conditions VDS= -25V, VGS= 0V, f = 1.0MHz Min - Typ - Max 45 25 12 Units pF pF pF Min - Typ 7.5 25 Max - Units ns ns Note 3. Short duration test pulse used to minimize self-heating 9/15/2005 Page 3 www.panjit.com BSS8402DW Typical Characteristics Curves - N-Channel - Q1 , 2N7002 TJ = 25C Unless otherwise noted 1 ID - Drain-Source Current (A) 1.2 ID - Drain Source Current (A 5.0V 0.8 V DS =10V 1 0.8 0.6 0.4 25oC 0.2 0 4.0V 0.6 VGS= 6V, 7V, 8V, 9V, 10V 0.4 0.2 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 3.0V 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Fig. 1. Output Characteristics 10 RDS(ON) - On-Resistance (Ohms) 8 6 4 2 VGS=10.0V 0 10 Fig. 2. Transfer Characteristics RDS(ON) - On-Resistance (Ohms) 8 6 4 V GS = 4.5V Ids=500mA 2 Ids=50mA 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 ID - Drain Current (A) Fig. 3. On-Resistance vs. Drain Current V GS Threshold Voltage (NORMALIZED 1.1 1.05 1 0.95 0.9 0.85 0.8 -50 V GS - Gate-to-Source Voltage (V) Fig. 4. On-Resistance vs. G-S Voltage 10 IS - Source Current (A ID =250A VGS = 0V 1 0.1 25oC -25 0 25 50 75 100 125 150 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 TJ - Junction Temperature (o C) Fig. 5. Threshold Voltage vs. Temperature 9/15/2005 Page 4 VSD - Source-to-Drain Voltage (V) Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com BSS8402DW Electrical Characteristic Curves - P-Channel - Q2 , BSS84 TJ = 25C Unless otherwise noted 1 -ID - Drain-to-Source Current (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 -ID - Drain Source Current (A) 1 0.9 V GS= 6V, 7V, 8V, 9V, 10V V DS =10V 0.8 0.6 0.4 25oC 0.2 0 0 1 2 3 4 5 6 7 5.0V 4.0V 3.0V -VDS - Drain-to-Source Voltage (V) -V GS - Gate-to-Source Voltage (V) Fig. 1. Output Characteristics 10 Fig. 2. Transfer Characteristics 10 RDS(ON) - On-Resistance (Ohms) 8 6 Ids=-500mA 4 2 Ids=-50mA 0 RDS(ON) - On-Resistance (Ohms) 8 V GS = 4.5V 6 4 VGS=10.0V 2 0 0 0.2 0.4 0.6 0.8 1 2 4 6 8 10 -ID - Drain Curre nt (A) -V GS - Gate-to-Source Voltage (V) Fig. 3. On-Resistance vs. Drain Current V GS Threshold Voltage (NORMALIZED 1.2 Fig. 4. On-Resistance vs. G-S Voltage 10 -IS - Source Current (A) ID =250A 1.1 VGS = 0V 1 1 25oC 0.1 0.9 0.8 -50 -25 0 25 50 75 100 o 125 150 0.01 0.4 0.6 0.8 1 1.2 1.4 TJ - Junction Temperature ( C) -VSD - Source-to-Drain Voltage (V) Fig. 5. Threshold Voltage vs. Temperature 9/15/2005 Page 5 Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com BSS8402DW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BSS8402DW T/R7: 7 inch reel, 3K units per reel, Pin 1 towards tape sprocket holes BSS8402DW T/R7-R: 7 inch reel, 3K units per reel, Pin 1 away from tape sprocket holes BSS8402DW T/R13: 13 inch reel, 10K units per reel, Pin 1 towards tape sprocket holes BSS8402DW T/R13-R: 13 inch reel, 10K units per reel, Pin 1 away from tape sprocket holes Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 9/15/2005 Page 6 www.panjit.com |
Price & Availability of BSS8402DWTR13
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